STP85NF55L

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Continuous Drain Current : 80 A
Package / Case : TO-220
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 0.008 Ohms


Application

 SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC CONVERTERS
AUTOMOTIVE ENVIRONMENT


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	55	V
VDGR	Drain- gate Voltage (RGS = 20 k)	55	V
VGS	Gate-source Voltage	±20	V
ID(`)	Drain Current (continuous) at Tc = 25 oC	80	A
ID	Drain Current (continuous) at Tc = 100 °C	80	A
IDM(••)	Drain Current (pulsed)	320	A
Ptot	Total Dissipation at Tc = 25 °C	300	W
	Derating Factor	2.0	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	10	V/ns
EAS(1)	Single Pulse Avalanche Energy	980	mJ
Tstg	Storage Temperature	-55 to 175	°C
Tj	Max. Operating Junction Temperature

Description

This Power MOSFET STP85NF55L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.