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STP8NA50FI

Features: TYPE VDSS RDS(on) ID STP8NA50FI 500 V < 0.85 4.5A` TYPICAL RDS(on) = 0.7 ` ± 30V GATE TO SOURCE VOLTAGE RATING` 100% AVALANCHE TESTED` REPETITIVE AVALANCHE DATA AT 100oC` LOW INTRINSIC CAPACITANCES` GATE GHARGE MINIMIZED` REDUCED THRESHOLD VOLTAGE SPREADAp...

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SeekIC No. : 004508540 Detail

STP8NA50FI: Features: TYPE VDSS RDS(on) ID STP8NA50FI 500 V < 0.85 4.5A` TYPICAL RDS(on) = 0.7 ` ± 30V GATE TO SOURCE VOLTAGE RATING` 100% AVALANCHE TESTED` REPETITIVE AVALANCHE ...

STP8NA50FI Data Sheet

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Part Number:
STP8NA50FI
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

TYPE
VDSS
RDS(on)
ID
STP8NA50FI
500 V
< 0.85
4.5 A

` TYPICAL RDS(on) = 0.7
` ± 30V GATE TO SOURCE VOLTAGE RATING
` 100% AVALANCHE TESTED
` REPETITIVE AVALANCHE DATA AT 100oC
` LOW INTRINSIC CAPACITANCES
` GATE GHARGE MINIMIZED
` REDUCED THRESHOLD VOLTAGE SPREAD


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWERSUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE




Specifications

Symbol
Parameter
Value
Unit
VDS
 Drain-sourceVoltage(VGS =0)
500
V
VDGR
 Drain-gateVoltage(RGS =20k)
500
V
VGS
 Gate-sourceVoltage
±30
V
ID
 DrainCurrent(continuous)atTc =25
4.5
A
ID
 Drain Current(continuous)atTc =100
3
A
IDM(`)
 Drain Current(pulsed)
32
A
Ptot
 Total DissipationatT =25
45
W
 Derating Factor
0.36
W/
VISO
 InsulationWithstandVoltage(DC)
2000
V
Tstg
 Storage Temperature
-65 to1 50
Tj
 Max.Operating Junction Temperature
150

(•) Pulse width limited by safe operating area


Description

This series of POWER MOSFETS STP8NA50FI represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.




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