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STP8NC50

Features: TYPE VDSS RDS(on) ID STP(B)8NC50(-1) 500 V < 0.85 8 A`TYPICAL RDS (on) = 0.7`EXTREMELY HIGH dv/dt CAPABILIT `100% AVALANCHE TESTED `NEW HIGH VOLTAGE BENCHMARK `GATE CHARGE MINIMIZEDApplication·HIGH CURRENT, HIGH SPEED SWITCHING·SWITH MODE POWER SUPPLIES (...

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STP8NC50: Features: TYPE VDSS RDS(on) ID STP(B)8NC50(-1) 500 V < 0.85 8 A`TYPICAL RDS (on) = 0.7`EXTREMELY HIGH dv/dt CAPABILIT `100% AVALANCHE TESTED `NEW HIGH VOLTAGE BENCHM...

STP8NC50 Data Sheet

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Part Number:
STP8NC50
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

TYPE
VDSS
RDS(on)
ID
STP(B)8NC50(-1)
500 V
< 0.85
8 A

`TYPICAL RDS (on) = 0.7
`EXTREMELY HIGH dv/dt CAPABILIT
`100% AVALANCHE TESTED
`NEW HIGH VOLTAGE BENCHMARK
`GATE CHARGE MINIMIZED


Application

·HIGH CURRENT, HIGH SPEED SWITCHING
·SWITH MODE POWER SUPPLIES (SMPS)
·DC-AC CONVERTERS FOR WELDING  EQUIPMENT AND UNINTERRUPTIBLE  POWER SUPPLIES AND MOTOR DRIVES


Specifications

Symbol
Parameter
Value
Units
VDS
 Drain-source Voltage (VGS = 0)
500
V
VDGR
 Drain-gate Voltage (RGS = 20 k )
500
V
VGS
 Gate- source Voltage
±30
V
ID
 Drain Current (continuos) at TC = 25
8
A
ID
 Drain Current (continuos) at TC = 100
5.4
A
IDM (`)
 Drain Current (pulsed)
32
A
PTOT
 Total Dissipation at TC = 25
135
W
 Derating Factor
1.075
/W/
dv/dt (1)
 Peak Diode Recovery voltage slope
3
V/ns
VISO
 Insulation Withstand Voltage (DC)
-
V
Tstg
 Storage Temperature
-65 to 15
Tj
 Max. Operating Junction Temperature
150

(`)Pulse width limited by safe operating area

(1)ISD8A, di/dt  100A/s,VDDV  (BR)DSS  , TjTJMAX.



Description

The PowerMESHTMII STP8NC50 is the evolution of the firstgeneration of MESH OVERLAYTM . The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM ing edge for what concerns swithing speed, gate charge and ruggedness.

 


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