Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220FP
Drain-Source Breakdown Voltage
: 500 V
Gate-Source Breakdown Voltage
: +/- 30 V
Continuous Drain Current
: 8 A
Resistance Drain-Source RDS (on)
: 0.85 Ohms
Features:
|
TYPE |
VDSS |
RDS(on) |
ID |
| STP8NC50FP |
500 V |
< 0.85 |
8 A |
`TYPICAL RDS (on) = 0.7
`EXTREMELY HIGH dv/dt CAPABILIT
`100% AVALANCHE TESTED
`NEW HIGH VOLTAGE BENCHMARK
`GATE CHARGE MINIMIZEDApplication·HIGH CURRENT, HIGH SPEED SWITCHING
·SWITH MODE POWER SUPPLIES (SMPS)
·DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVESSpecifications
|
Symbol |
Parameter |
Value |
Units |
|
VDS |
Drain-source Voltage (VGS = 0) |
500 |
V |
|
VDGR |
Drain-gate Voltage (RGS = 20 k ) |
500 |
V |
|
VGS |
Gate- source Voltage |
±30 |
V |
|
ID |
Drain Current (continuos) at TC = 25 |
8(*) |
A |
|
ID |
Drain Current (continuos) at TC = 100 |
5.4(*) |
A |
|
IDM (`) |
Drain Current (pulsed) |
32(*) |
A |
|
PTOT |
Total Dissipation at TC = 25 |
40 |
W |
|
|
Derating Factor |
0.32 |
/W/ |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
3 |
V/ns |
|
VISO |
Insulation Withstand Voltage (DC) |
2000 |
V |
|
Tstg |
Storage Temperature |
-65 to 15 |
|
|
Tj |
Max. Operating Junction Temperature |
150 |
|
(`)Pulse width limited by safe operating area
(1)ISD8A, di/dt 100A/s,VDDV (BR)DSS , TjTJMAX.
(*) Limited only by maximum temperature allowed
DescriptionThe PowerMESHTMII STP8NC50FP is the evolution of the firstgeneration of MESH OVERLAYTM . The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM ing edge for what concerns swithing speed, gate charge and ruggedness.
STP8NC50FP Data Sheet
