STP8NC60

Features: TYPICAL RDS(on) = 0.85EXTREMELY HIGH dv/dt CAPABILITY100% AVALANCHE TESTEDNEW HIGH VOLTAGE BENCHMARKGATE CHARGE MINIMIZEDApplicationHIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIV...

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SeekIC No. : 004508542 Detail

STP8NC60: Features: TYPICAL RDS(on) = 0.85EXTREMELY HIGH dv/dt CAPABILITY100% AVALANCHE TESTEDNEW HIGH VOLTAGE BENCHMARKGATE CHARGE MINIMIZEDApplicationHIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPP...

floor Price/Ceiling Price

Part Number:
STP8NC60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

TYPICAL RDS(on) = 0.85
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED



Application

 HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
    EQUIPMENT AND UNINTERRUPTIBLE
   POWER SUPPLIES AND MOTOR DRIVES



Specifications

Symbol
Parameter
Value
Unit
STP60NE10 STP60NE10FP
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain- gate Voltage (RGS = 20 k)
600
V
VGS
Gate-source Voltage
±30
V
ID
Drain Current (continuous) at Tc = 25 7
7 (*)
A
ID
Drain Current (continuous) at Tc = 100 4.4
4.4 (*)
A
IDM(`)
Drain Current (pulsed) 28
28 (*)
A
Ptot
Total Dissipation at Tc = 25 125
30
W
Derating Factor 1.0
0.24
W/
dv/dt
Peak Diode Recovery voltage slope
7
V/ns
VISO
Insulation Withstand Voltage (DC)
-
2500
V
Tstg
Storage Temperature
-65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
(•)Pulse width limited by safe operating area     (1)ISD 7A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed



Description

The PowerMESH™II STP8NC60 is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.




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