MFG:ST Package Cooled:TO-220 D/C:08+
MFG: ST
Package Cooled: TO-220
D/C: 08+
Description: The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout ref...
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
|
Symbol |
Parameter |
Value |
Unit | |
| STP60NE10 | STP60NE10FP | |||
|
VDS |
Drain-source Voltage (VGS = 0) |
600 |
V | |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
600 |
V | |
|
VGS |
Gate-source Voltage |
±30 |
V | |
|
ID |
Drain Current (continuous) at Tc = 25 | 7 |
7 (*) |
A |
|
ID |
Drain Current (continuous) at Tc = 100 | 4.4 |
4.4 (*) |
A |
|
IDM(`) |
Drain Current (pulsed) | 28 |
28 (*) |
A |
|
Ptot |
Total Dissipation at Tc = 25 | 125 |
30 |
W |
| Derating Factor | 1.0 |
0.24 |
W/ | |
|
dv/dt |
Peak Diode Recovery voltage slope |
7 |
V/ns | |
|
VISO |
Insulation Withstand Voltage (DC) |
- |
2500 |
V |
|
Tstg |
Storage Temperature |
-65 to 150
|
°C | |
|
Tj |
Max. Operating Junction Temperature |
150 |
°C | |
STP8NC60
PDF/DataSheet Download
The PowerMESHTMII STP8NC50FP is the evolution of the firstgeneration of MESH OVERLAYTM.The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM ing edge for what concern...
The PowerMESHTMII STP8NC50 is the evolution of the firstgeneration of MESH OVERLAYTM.The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM ing edge for what concerns ...
This series of POWER MOSFETS STP8NA50FI represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior ...
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