MFG:TO220ABNONISOL Package Cooled:7850 D/C:ST
MFG: TO220ABNONISOL
Package Cooled: 7850
D/C: ST
Description: The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip...
The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
| Symbol | Parameter | Value | Unit | |
| TO-220 | TO-220FP | |||
| VDS VDGR VGS |
Drain-source Voltage (VGS=0) Drain-gate Voltage Gate-Source Voltage |
1000 1000 ± 30 |
V V V | |
| ID Note 1 ID IDM Note 2 PTOT |
Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor |
6.5 4.3 16 160 1.28 |
6.5 4.3 16 40 0.32 |
A A A W W/°C |
| VESD(G-S) dv/dt Note 3 |
Gate source ESD (HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope |
4000 4.5 |
V V/ns | |
| VISO | Insulation Withstand Voltage (DC) | -- | 2500 | V |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 | °C | |
STP04CM596B1R
PDF/DataSheet Download
The STP8NC60FP PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, g...
The PowerMESH™II STP8NC60 is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gat...
The PowerMESHTMII STP8NC50FP is the evolution of the firstgeneration of MESH OVERLAYTM.The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM ing edge for what concern...
The PowerMESHTMII STP8NC50 is the evolution of the firstgeneration of MESH OVERLAYTM.The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM ing edge for what concerns ...
This series of POWER MOSFETS STP8NA50FI represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior ...
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