MFG:ST Package Cooled:1500 D/C:IC
MFG: ST
Package Cooled: 1500
D/C: IC
Description: The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip...
The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
| Symbol | Parameter | Value | Unit | |
| STP8NK80Z - STW8NK80Z | STP8NK80ZFP | |||
| VDS |
Drain-source Voltage (VGS = 0) |
800 | V | |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
800 | V | |
| VGS |
Gate-source Voltage |
±30 | V | |
| ID |
Drain Current (continuous) at Tc = 25 |
6.2 | 6.2 (*) | A |
| ID |
Drain Current (continuous) at Tc = 100 |
3.9 | 3.9 (*) | A |
| IDM(.) |
Drain Current (pulsed) |
24.8 | 24.8 (*) | A |
| PTOT |
Total Dissipation at Tc = 25 |
140 | 30 | W |
|
Derating Factor |
1.12 | 0.24 | W/ | |
|
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5 K) |
4000 |
V | |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns | |
|
VISO |
Insulation Withstand Voltage (DC) |
- |
2500 |
V |
| Tj Tstg |
Operating Junction Temperature |
-55 to 150 | ||
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
STP8NK80Z
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