Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220FP
Gate-Source Breakdown Voltage
: +/- 30 V
Resistance Drain-Source RDS (on)
: 1.5 Ohms
Continuous Drain Current
: 6.2 A
Drain-Source Breakdown Voltage
: 800 V
Features: The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
Application·HIGH CURRENT, HIGH SPEED SWITCHING
·IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PFC
·LIGHTINGSpecifications
| Symbol |
Parameter |
Value |
Unit |
| |
STP8NK80Z - STW8NK80Z |
|
STP8NK80ZFP |
|
VDS
|
Drain-source Voltage (VGS = 0) |
800 |
V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
800 |
V |
| VGS |
Gate-source Voltage |
±30 |
V |
| ID |
Drain Current (continuous) at Tc = 25 |
6.2 |
6.2 (*) |
A |
| ID |
Drain Current (continuous) at Tc = 100 |
3.9 |
3.9 (*) |
A |
| IDM(.) |
Drain Current (pulsed) |
24.8 |
24.8 (*) |
A |
| PTOT |
Total Dissipation at Tc = 25 |
140 |
30 |
W |
|
Derating Factor |
1.12 |
0.24 |
W/ |
|
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5 K) |
4000 |
V |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
|
VISO |
Insulation Withstand Voltage (DC) |
- |
2500 |
V |
Tj
Tstg |
Operating Junction Temperature
Storage Temperature |
-55 to 150 |
|
|
(•)Pulse width limited by safe operating area
(1)ISD 6.2A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
(*)Limited only by maximum temperature allowedDescriptionThe STP8NK80ZFP SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage STP8NK80ZFP MOSFETs including revolutionary MDmesh™ products.
STP8NK80ZFP Data Sheet
