MOSFET SuperMESH MOSFET
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Application HIGH CURRENT, HIGH SPEED SWITCHING POWER MOTOR CONTROL DC-DC & DC-AC CONVERTERS SY...
Features: `ULTRAHIGHDENSITYTECHNOLOGY`TYPICAL RDS(on)=7m?`AVALANCHERUGGEDTECHNOLOGY`LOWGATECHARGE`...
Features: `TYPICAL RDS(on) = 8.5 mW`AVALANCHE RUGGED TECHNOLOGY`100% AVALANCE TESTED`HIGH CURRENT ...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 850 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 6.7 A | ||
| Resistance Drain-Source RDS (on) : | 1.1 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220 | Packaging : | Tube |
The STP8NK85Z is obtained through an extreme optimization of ST's well estabilished stripbased powerMESH layout. The features of STP8NK85 Z are as follows: (1)typical RDS(on)=1.1 ; (2)extremely high dv/dt capability; (3)100% avlanche tested; (4)gate change minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.
The following is about the absolute maximum ratings of STP8NK85Z: (1)drain-source voltage(VGS=0): 850V; (2)drain-gate voltage(VGS=20 k): 850V; (3)gate-source voltage: ±30V; (4)drain current at TC=25: 6.7A; (5)drain current at TC=100: 4.3A; (6)drain current (pulse): 26.7A; (7)total dissipation at TC=25: 150W; (8)derating factor: 1.20W/; (9)gate source ESD: 4000V; (10)peak diode recovery voltage slope: 4.5V/ns.
The electrical characteristics of the STP8NK85Z are: (1)drain-source breakdown voltage: 850V min at ID=1mA, VGS=0; (2)zero gate voltage drain source (VGS=0): 1 A max at VDS=max rating and 50 A at VDS=max rating, TC=125; (3)gate-body leakage current (VDS=0): ±10 A at VGS=±20V; (4)gate threshold voltage: 3V min, 3.75V typ and 4.5V max at VGS=VDS, ID=100 A; (5)static drain-source on resistance: 1.1 typ and 1.4 max at VGS=10V, ID=3.35 A.
| Technical/Catalog Information | STP8NK85Z |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 850V |
| Current - Continuous Drain (Id) @ 25° C | 6.7A |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 3.35A, 10V |
| Input Capacitance (Ciss) @ Vds | 1870pF @ 25V |
| Power - Max | 150W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 60nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP8NK85Z STP8NK85Z 497 5205 5 ND 49752055ND 497-5205-5 |