STP8NK85Z

MOSFET SuperMESH MOSFET

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STP8NK85Z Picture
SeekIC No. : 00159875 Detail

STP8NK85Z: MOSFET SuperMESH MOSFET

floor Price/Ceiling Price

Part Number:
STP8NK85Z
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 850 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 6.7 A
Resistance Drain-Source RDS (on) : 1.1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 6.7 A
Resistance Drain-Source RDS (on) : 1.1 Ohms
Drain-Source Breakdown Voltage : 850 V


Description

The STP8NK85Z is obtained through an extreme optimization of ST's well estabilished stripbased powerMESH layout. The features of STP8NK85 Z are as follows: (1)typical RDS(on)=1.1 ; (2)extremely high dv/dt capability; (3)100% avlanche tested; (4)gate change minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.

The following is about the absolute maximum ratings of STP8NK85Z: (1)drain-source voltage(VGS=0): 850V; (2)drain-gate voltage(VGS=20 k): 850V; (3)gate-source voltage: ±30V; (4)drain current at TC=25: 6.7A; (5)drain current at TC=100: 4.3A; (6)drain current (pulse): 26.7A; (7)total dissipation at TC=25: 150W; (8)derating factor: 1.20W/; (9)gate source ESD: 4000V; (10)peak diode recovery voltage slope: 4.5V/ns.

The electrical characteristics of the STP8NK85Z are: (1)drain-source breakdown voltage: 850V min at ID=1mA, VGS=0; (2)zero gate voltage drain source (VGS=0): 1 A max at VDS=max rating and 50 A at VDS=max rating, TC=125; (3)gate-body leakage current (VDS=0): ±10 A at VGS=±20V; (4)gate threshold voltage: 3V min, 3.75V typ and 4.5V max at VGS=VDS, ID=100 A; (5)static drain-source on resistance: 1.1 typ and 1.4 max at VGS=10V, ID=3.35 A.




Parameters:

Technical/Catalog InformationSTP8NK85Z
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)850V
Current - Continuous Drain (Id) @ 25° C6.7A
Rds On (Max) @ Id, Vgs1.4 Ohm @ 3.35A, 10V
Input Capacitance (Ciss) @ Vds 1870pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs60nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP8NK85Z
STP8NK85Z
497 5205 5 ND
49752055ND
497-5205-5



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