STP8NK85Z

The STP8NK85Z is obtained through an extreme optimization of ST's well estabilished stripbased powerMESH layout. The features of STP8NK85Z are as follows: (1)typical RDS(on)=1.1 ; (2)extremely high dv/dt capability; (3)100% avlanche tested; (4)gate change minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.

The following is about the absolute maximum ratings of STP8NK85Z: (1)drain-source voltage(VGS=0): 850V; (2)drain-gate voltage(VGS=20 k): 850V; (3)gate-source voltage: ±30V; (4)drain current at TC=25: 6.7A; (5)drain current at TC=100: 4.3A; (6)drain current (pulse): 26.7A; (7)total dissipation at TC=25: 150W; (8)derating factor: 1.20W/; (9)gate source ESD: 4000V; (10)peak diode recovery voltage slope: 4.5V/ns.

The electrical characteristics of the STP8NK85Z are: (1)drain-source breakdown voltage: 850V min at ID=1mA, VGS=0; (2)zero gate voltage drain source (VGS=0): 1 A max at VDS=max rating and 50 A at VDS=max rating, TC=125; (3)gate-body leakage current (VDS=0): ±10 A at VGS=±20V; (4)gate threshold voltage: 3V min, 3.75V typ and 4.5V max at VGS=VDS, ID=100 A; (5)static drain-source on resistance: 1.1 typ and 1.4 max at VGS=10V, ID=3.35 A.