STP8NM50

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.8 Ohms


Features:

`TYPICAL RDS (on) = 0.7
`HIGH dv/dt AND AVALANCHE CAPABILITIES
`100% AVALANCHE TESTED
`LOW INPUT CAPACITANCE AND GATE  CHARGE
`LOW GATE INPUT RESISTANCE


Application

The MDmesh^TM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

Specifications

Symbol	Parameter	Value		Unit
		STP8NM50	STP8NM50FP
VDS	Drain-source Voltage (VGS = 0)	500		V
VDGR	Drain-gate Voltage (RGS = 20 )	500		V
VGS	Gate- source Voltage	±30		V
ID	Drain Current (continuous) at TC = 25	5	5(*)	A
ID	Drain Current (continuous) at TC = 100	3.1	3.1(*)	A
IDM(`)	Drain Current (pulsed)	20	20(*)	A
PTOT	Total Dissipation at TC = 25	120	30	W
	Derating Factor	0.4		W/
dv/dt(1)	Peak Diode Recovery voltage slope	15		V/ns
VISO	Insulation Withstand Voltage (DC)	-	2500	V
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature

Description

The STP8NM50 MDmesh^TM is a new revolutionary MOSFET technology that associates the Multiple Drain pro-cess with the Company's PowerMESH^TM horizonta layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overal dynamic performance that is significantly better than that of similar competition's products.

Parameters:

Technical/Catalog Information	STP8NM50
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	550V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	800 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds	415pF @ 25V
Power - Max	100W
Packaging	Tube
Gate Charge (Qg) @ Vgs	13nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP8NM50 STP8NM50