MFG:TO220ISOFULLPACKINLINE Package Cooled:7850 D/C:ST
MFG: TO220ISOFULLPACKINLINE
Package Cooled: 7850
D/C: ST
Description: The MDmeshTMis a new revolutionary MOSFET technology that associates the Multiple Dra...
The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain pro-cess with the Company's PowerMESHTM horizonta layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overal dynamic performance that is significantly better than that of similar competition's products.
| Symbol | Parameter | Value | Unit | |
STP8NM50 |
STP8NM50FP | |||
| VDS | Drain-source Voltage (VGS = 0) |
500 | V | |
| VDGR | Drain-gate Voltage (RGS = 20 ) |
500 | V | |
| VGS | Gate- source Voltage | ±30 | V | |
| ID | Drain Current (continuous) at TC = 25 |
5 | 5(*) | A |
| ID | Drain Current (continuous) at TC = 100 | 3.1 | 3.1(*) | A |
| IDM(`) | Drain Current (pulsed) | 20 | 20(*) | A |
| PTOT | Total Dissipation at TC = 25 |
120 | 30 | W |
| Derating Factor | 0.4 | W/ | ||
| dv/dt(1) | Peak Diode Recovery voltage slope | 15 | V/ns | |
| VISO | Insulation Withstand Voltage (DC) | - | 2500 | V |
| Tstg | Storage Temperature | -65 to 150 | ||
| Tj | Max. Operating Junction Temperature | |||
The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
STP8NM50FP
PDF/DataSheet Download
The STP8NM50 MDmeshTMis a new revolutionary MOSFET technology that associates the Multiple Drain pro-cess with the Company's PowerMESHTM horizonta layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avala...
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