STP8NS25

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Package / Case : TO-220
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.45 Ohms


Application

HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
 DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT

Specifications

Symbol	Parameter	Value		Unit
		STP8NS25	STP8NS25FP
VDS	Drain-source Voltage (VGS = 0)	250		V
VDGR	Drain- gate Voltage(RGS = 20 k)	250		V
VGS	Gate-source Voltage	± 30		V
ID	Drain Current (continuous) at Tc = 25 oC	8	8(*)	A
ID	Drain Current (continuous) at Tc = 100 oC	5	5(*)	A
IDM (`)	Drain Current (pulsed)	32	32(*)	A
Ptot	Total Dissipation at Tc = 25 oC	80	30	W
	Derating Factor	0.64	0.25	W/oC
dv/dt (1)	Peak Diode Recovery voltage slope	5		V/ns
VISO	Insulation Withstand Voltage(DC)	-	2000	V
Tstg	Storage Temperature	-65 to 150		oC
Tj	Max. Operating Junction Temperature	150		oC

Description

Using the latest high voltage MESH OVERLAY™ process, STP8NS25 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications.

Parameters:

Technical/Catalog Information	STP8NS25
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	450 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	770pF @ 25V
Power - Max	80W
Packaging	Tube
Gate Charge (Qg) @ Vgs	51.8nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP8NS25 STP8NS25