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Part Number: STP8NS25FP

 

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Description: Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced...


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STP8NS25FP General Description


Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications.

STP8NS25FP Maximum Ratings

Symbol
Parameter
Value
Unit
STP8NS25 STP8NS25FP
VDS
 Drain-source Voltage (VGS = 0)
250
V
VDGR
 Drain- gate Voltage(RGS = 20 k)
250
V
VGS
 Gate-source Voltage
± 30
V
ID
 Drain Current (continuous) at Tc = 25 oC
8
8(*)
A
ID
 Drain Current (continuous) at Tc = 100 oC
5
5(*)
A
IDM (`)
 Drain Current (pulsed)
32
32(*)
A
Ptot
 Total Dissipation at Tc = 25 oC
80
30
W
 Derating Factor
0.64
0.25
W/oC
dv/dt (1)
 Peak Diode Recovery voltage slope
5
V/ns
VISO
 Insulation Withstand Voltage(DC)
-
2000
V
Tstg
 Storage Temperature
-65 to 150
oC
Tj
 Max. Operating Junction Temperature
150
oC

STP8NS25FP Typical Application

HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
 DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT

STP8NS25FP datasheet

STP8NS25FP
PDF/DataSheet Download

  • Datasheet: STP8NS25FP
  • File Size: 336975 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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