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STPR2010CT

Features: · Glass passivated chip· Superfast switching time for high efficiency· Low forward voltage drop and high current capability· Low reverse leakage current· High surge capacitySpecifications Symbol Characteristics Maximum Ratings Unit I(AV) Maximum Average Forward Rectified Curr...

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SeekIC No. : 004508575 Detail

STPR2010CT: Features: · Glass passivated chip· Superfast switching time for high efficiency· Low forward voltage drop and high current capability· Low reverse leakage current· High surge capacitySpecifications ...

STPR2010CT Data Sheet

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Part Number:
STPR2010CT
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

· Glass passivated chip
· Superfast switching time for high efficiency
· Low forward voltage drop and high current capability
· Low reverse leakage current
· High surge capacity


Specifications

Symbol Characteristics Maximum Ratings Unit
I(AV) Maximum Average Forward Rectified Current @TC=95 C 20 A
IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)		 125 A
VF Maximum Forward Voltage At
Pulse Width=300us
2% Duty Cycle
IF=10A @TJ=25
IF=10A @TJ=125
IF=20A @TJ=25
IF=20A @TJ=125		 1.1
1.0
1.25
1.20		 V
IR Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25
@TJ=100		 5
100		 uA
CJ Typical Junction Capacitance Per Element (Note 1) 100 pF
TRR Maximum Reverse Recovery Time (Note 2) 35 ns
ROJC Typical Thermal Resistance (Note 3) 1.5 /W
TJ, TSTG Operating And Storage Temperature Range -55 to +150
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
3. Thermal Resistance Junction To Case.


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