Features: ·HIGH JUNCTION TEMPERATURE CAPABILITY FOR CONVERTERS LOCATED IN CONFINED ENVIRONMENT·LOW LEAKAGE CURRENT AT HIGH TEMPERATURE·LOW STATIC AND DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRIER ·AVALANCHE CAPABILITY SPECIFIEDSpecifications Symbol Parameter Value Unit VRRM Repeti...
STPS10H100CR: Features: ·HIGH JUNCTION TEMPERATURE CAPABILITY FOR CONVERTERS LOCATED IN CONFINED ENVIRONMENT·LOW LEAKAGE CURRENT AT HIGH TEMPERATURE·LOW STATIC AND DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRI...
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| Symbol | Parameter | Value | Unit | |||
| VRRM | Repetitive peak reverse voltage | 100 | V | |||
| IF(RMS) | RMS forward current | 10 | A | |||
| IF(AV) | Average forward current d = 0.5 |
TO-220AB D2PAK / I2PAK |
Tc = 165 | per diode per device |
5 10 |
A |
| TO-220FPAB | Tc = 160 | |||||
| IFSM | Surge non repetitive forward current | tp = 10 ms sinusoidal | 180 | A | ||
| IRRM | Repetitive peak reverse current | tp = 2 µs square F = 1kHz | 1 | A | ||
| PARM | Repetitive peak avalanche power | tp = 1µs Tj = 25 | 7200 | W | ||
| Tstg | Storage temperature range | - 65 to + 175 | ||||
| Tj | Maximum operating junction temperature * | 175 | ||||
| dV/dt | Critical rate of rise of reverse voltage | 10000 | V/µs | |||