FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 500mA
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: 15nC @ 10V
Power - Max: 3W
Drain to Source Voltage (Vdss): 500V
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92-3
Input Capacitance (Ciss) @ Vds: 280pF @ 25V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Series: SuperMESH™
Manufacturer: STMicroelectronics
Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 1.15A, 10V
Features: ` TYPICAL RDS(on) = 2.8
` EXTREMELY HIGH dv/dt CAPABILITY
` ESD IMPROVED CAPABILITY)
`100% AVALANCHE TESTED
` NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZEDApplication· AC ADAPTORS AND BATTERY CHARGERS
· SWITH MODE POWER SUPPLIES (SMPS)
· LIGHTINGSpecifications
| Symbol |
Parameter |
Value |
Unit |
| DPAK/IPAK |
TO-92 |
| VDS |
Collector-Source Voltage (VGS = 0 V) |
500 |
V |
| VDGR |
Drain-gate Voltage (RGS = 20 k) |
500 |
V |
| VGS |
Gate-Source Voltage |
± 30 |
V |
| ID |
Drain Current (continuous) at TC = 25 |
2.3 |
0.5 |
A |
| ID |
Drain Current (continuous) at TC = 100 |
1.45 |
0.32 |
A |
| IDM(`) |
Drain Current (pulsed) |
9.2 |
2 |
A |
| PTOT |
Total Dissipation at TC = 25 |
45 |
3 |
W |
| |
Derating Factor |
0.36 |
0.025 |
W/ |
| VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5K) |
2000 |
V |
| dv/dt(1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
Tj
Tstg |
Operating Junction Temperature
Storage Temperature |
-55 to 150 |
|
(`) Pulse width limited by safe operating area
(1) ID 2 di/dt 200A/s, VDD V(BR)DSSDescriptionThe SuperMESH™ series STQ3NK50ZR-AP is obtained through an extreme opyimization of ST's well established strip based PowerMESH™ layout. In addition to pushing on-resistance significatly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage MOSFETs icluding revolutionary MDmesh™ products.
Parameters: | Technical/Catalog Information | STQ3NK50ZR-AP |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 500mA |
| Rds On (Max) @ Id, Vgs | 3.3 Ohm @ 1.15A, 10V |
| Input Capacitance (Ciss) @ Vds | 280pF @ 25V |
| Power - Max | 3W |
| Packaging | Tape & Box (TB) |
| Gate Charge (Qg) @ Vgs | 15nC @ 10V |
| Package / Case | TO-92-3 (Formed Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STQ3NK50ZR AP
STQ3NK50ZRAP
|
STQ3NK50ZR-AP Data Sheet
