STQ3NK50ZR-AP

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 500mA
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: 15nC @ 10V
Power - Max: 3W
Drain to Source Voltage (Vdss): 500V
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92-3
Input Capacitance (Ciss) @ Vds: 280pF @ 25V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Series: SuperMESH™
Manufacturer: STMicroelectronics
Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 1.15A, 10V


Features:

` TYPICAL R<sub>DS(on)</sub> = 2.8
` EXTREMELY HIGH dv/dt CAPABILITY
` ESD IMPROVED CAPABILITY)
`100% AVALANCHE TESTED
` NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZED


Application

· AC ADAPTORS AND BATTERY CHARGERS
· SWITH MODE POWER SUPPLIES (SMPS)
· LIGHTING


Specifications

Symbol	Parameter	Value			Unit
		DPAK/IPAK	TO-92
VDS	Collector-Source Voltage (VGS = 0 V)	500			V
VDGR	Drain-gate Voltage (RGS = 20 k)	500			V
VGS	Gate-Source Voltage	± 30			V
ID	Drain Current (continuous) at TC = 25	2.3		0.5	A
ID	Drain Current (continuous) at TC = 100	1.45		0.32	A
IDM(`)	Drain Current (pulsed)	9.2		2	A
PTOT	Total Dissipation at TC = 25	45		3	W
	Derating Factor	0.36		0.025	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	2000			V
dv/dt(1)	Peak Diode Recovery voltage slope	4.5			V/ns
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150

(`) Pulse width limited by safe operating area
(1) I_D 2 di/dt 200A/s, V_DD V_(BR)DSS


Description

The SuperMESH™ series STQ3NK50ZR-AP is obtained through an extreme opyimization of ST's well established strip  based PowerMESH™ layout. In addition to pushing on-resistance significatly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage MOSFETs icluding revolutionary MDmesh™ products.

Parameters:

Technical/Catalog Information	STQ3NK50ZR-AP
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	500mA
Rds On (Max) @ Id, Vgs	3.3 Ohm @ 1.15A, 10V
Input Capacitance (Ciss) @ Vds	280pF @ 25V
Power - Max	3W
Packaging	Tape & Box (TB)
Gate Charge (Qg) @ Vgs	15nC @ 10V
Package / Case	TO-92-3 (Formed Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STQ3NK50ZR AP STQ3NK50ZRAP