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MFG:STM  D/C:08+  

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Part Number: STQ3NK50ZR-AP

 

MFG: STM

 

D/C: 08+

Description: The SuperMESH™ series is obtained through anextreme opyimization of ST's well established ...


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STQ3NK50ZR-AP General Description


The SuperMESH™ series is obtained through an extreme opyimization of ST's well established strip  based PowerMESH™ layout. In addition to pushing on-resistance significatly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage MOSFETs icluding revolutionary MDmesh™ products.

STQ3NK50ZR-AP Maximum Ratings

Symbol Parameter
Value
Unit
DPAK/IPAK
TO-92
VDS Collector-Source Voltage (VGS = 0 V)
500
V
VDGR Drain-gate Voltage (RGS = 20 k)
500
V
VGS Gate-Source Voltage
± 30
V
ID Drain Current (continuous) at TC = 25
2.3
0.5
A
ID Drain Current (continuous) at TC = 100
1.45
0.32
A
IDM(`) Drain Current (pulsed)
9.2
2
A
PTOT Total Dissipation at TC = 25
45
3
W
  Derating Factor
0.36
0.025
W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
2000
V
dv/dt(1) Peak Diode Recovery voltage slope
4.5
V/ns
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
(`) Pulse width limited by safe operating area
(1) ID 2 di/dt 200A/s, VDD V(BR)DSS

STQ3NK50ZR-AP Features

` TYPICAL RDS(on) = 2.8
` EXTREMELY HIGH dv/dt CAPABILITY
` ESD IMPROVED CAPABILITY)
`100% AVALANCHE TESTED
` NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZED

STQ3NK50ZR-AP Typical Application

· AC ADAPTORS AND BATTERY CHARGERS
· SWITH MODE POWER SUPPLIES (SMPS)
· LIGHTING

STQ3NK50ZR-AP datasheet

STQ3NK50ZR-AP
PDF/DataSheet Download

  • Datasheet: STQ3NK50ZR-AP
  • File Size: 493458 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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