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STR-A6252

Features: 50 kHz PWM with ±5% Frequency Jittering Cost Reduction of EMI Noise Filtering Rugged 650 V Avalanche-Rated MOSFET Simplified Surge Absorption No VDSS Derating Required Choice of rDS(on) (2.8 or 3.95 maximum) Auto-Burst Mode for Stand-By Operation or Light Loads Less Transformer Audibl...

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STR-A6252: Features: 50 kHz PWM with ±5% Frequency Jittering Cost Reduction of EMI Noise Filtering Rugged 650 V Avalanche-Rated MOSFET Simplified Surge Absorption No VDSS Derating Required Choice of rDS(on) (...

STR-A6252 Data Sheet

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Part Number:
STR-A6252
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/16

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Product Details

Description



Features:

50 kHz PWM with ±5% Frequency Jittering Cost Reduction of EMI Noise Filtering
Rugged 650 V Avalanche-Rated MOSFET Simplified Surge Absorption No VDSS Derating Required
Choice of rDS(on) (2.8 or 3.95 maximum)
Auto-Burst Mode for Stand-By Operation or Light Loads Less Transformer Audible Noise
Built-In Leading Edge Blanking
Soft Start and Low Start-Up Current Start-Up Circuit Disabled in Operation
Low Operating Current (4 mA max)


Specifications

Control Supply Voltage, VCC . . . . .   . . . 36 V
Drain-Source Voltage, VDSS . . . . . .  . . 650 V
Drain Switching Current, ID
STR-A6251 . . . . . . . . .  . . . . . . . .. . . . . 2.5 A*
STR-A6252 . . . . . . . . . . . .  . . . . . . ..  . . 3.0 A*
Peak Drain Switching Current, IDM
STR-A6251 . . . . . . . . . . . . .  . . . . . . . .. . 2.5 A
STR-A6252 . . . . . . . . . . . . . . . . . . . . . . . 3.0 A
Single-Pulse Avalanche Energy, EAS
STR-A6251 . . . . . . . . . . . . . . . . . . . . . . . 72 mJ
STR-A6252 . . . . . . . . . . . . . . . . . . . . . . 123 mJ
S/OCP Voltage Range,
VOCP . . . . . . . . . . . . . . . . . . . . 0.3 V to +6 V
FB/CC/OLP Voltage Range,
VFB/OLP . . . . . . . . . . . . . . . . .  0.3 V to +12 V
FM Voltage Range,
VFM . . . . . . . . . . . . . . . . . . . . . . 0.3 V to +6 V
Package Power Dissipation, PD
control (VCC * ICC(ON)) . . . . . . . . . . . . 0.15 W
MOSFET (VDSS * ID) . . . . . . . . . . . . ..  . 1.35 W
total . . . . . . . . . . . . . . . . . . . . . . . . . .  . . 1.5 W
MOSFET Channel Temp., TJ . +150°C
Internal Frame Temp., TF . . . . . . . .. . . +125°C
Storage Temperature Range,
TS . . . . . . . . . . . . . . . . . . . . . -40°C to +125°C
* Drain switching current is limited by temperature
(page 2) and safe operating area(page 4).




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