STR-S6707

Features: · Quasi-Resonant Operation for Low EMI and High Efficiency· Output Power to 220 W· Low-Power Output Standby Mode· Pulse-by-Pulse Over-Current Protection· Latched Over-Voltage and Thermal Protection· Third-Generation Switching Transistor with Proportional Drive· Maximum ON Time and Off Ti...

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SeekIC No. : 004508726 Detail

STR-S6707: Features: · Quasi-Resonant Operation for Low EMI and High Efficiency· Output Power to 220 W· Low-Power Output Standby Mode· Pulse-by-Pulse Over-Current Protection· Latched Over-Voltage and Thermal P...

floor Price/Ceiling Price

Part Number:
STR-S6707
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Description



Features:

·  Quasi-Resonant Operation for Low EMI and High Efficiency
·  Output Power to 220 W
·  Low-Power Output Standby Mode
·  Pulse-by-Pulse Over-Current Protection
·  Latched Over-Voltage and Thermal Protection
· Third-Generation Switching Transistor with Proportional Drive
·  Maximum ON Time and Off Time Set During Manufacture
·  Internal Under-Voltage Lockout with Hysteresis
·  Over-Molded SIP with Integral Isolated Heat Spreader



Specifications

Supply Voltage, VIN ...........................  15 V
Output Voltage, VCEX .......................  850 V
VEBO ................................................  7 V
Continuous Output Current, IC ..........................................  See Table
1 ms Single-Pulse Output Current, ICM ........................................  See Table
Sink Current, IS.........................  See Table
Drive Current, ID ..........................  -700 mA
Feedback Current, IFDBK .................  20 mA
Inhibit Voltage, VINH ...........................  15 V
Over-Current Protection Voltage Range, VOCP ............................................  ±3.5 V
Insulation Voltage,VWM(RMS) ...........  2000 V
Package Power Diss., PD ........  See Graph
Output Junction Temperature, TJ ..  +150°C
Internal Frame Temperature, TF ...  +125°C
Operating Temperature Range, TA ...............................  -20°C to +125°C
Storage Temperature Range, Tstg .............................  -40°C to +125°C



Description

The STR-S6707, STR-S6708, and STR-S6709 are specifically designed to meet the requirement for increased integration and reliabil- ity in off-line quasi-resonant flyback converters.  These devices STR-S6707 incorpo- rate the primary control and proportional drive circuit with a third- generation high-voltage bipolar switching transistor.

Crucial system parameters STR-S6707 such as maximum ON time and OFF time are fixed during manufacture.  Local control circuit decoupling and layout are optimized within each device.

Cycle-by-cycle current limiting, under-voltage lock-out with hyster- esis, over-voltage protection, and thermal shutdown protect these devices STR-S6707 during all normal and overload conditions.  Over-voltage protection and thermal shutdown are latched after a short delay.  A versatile triple-level inhibit circuit includes the OFF time synchronization required to establish quasi-resonant operation.  The inhibit function has also been expanded to initiate operation in stand-by mode in which the power supply delivers a small fraction of the steady-state output power. The dual requirements of dielectric isolation and low transient thermal impedance and steady-state thermal resistance are satisfied in an over- molded single-in-line power package.

Proven in substantial volumes, these devices STR-S6707 and their fixed- frequency counterparts represent a significant advance in off-line SMPS reliability growth and integration.




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