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Part Number: STR-W6765

 

 

 

 

Description: The STR-W6765 is a quasi-resonant topology IC designed for SMPS applications. It shows lower EMI noise...


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STR-W6765 General Description


The STR-W6765 is a quasi-resonant topology IC designed for SMPS applications. It shows lower EMI noise characteristics than conventional PWM solutions, especially at greater than 2 MHz. It also provides a soft-switching operation to turn on the internal MOSFET at close to zero voltage (VDS bottom point) by use of the resonant characteristic of primary inductance and a resonant capacitor.

The package is a fully molded TO-220, which contains the controller chip (MIC) and MOSFET, enabling output power up to 52 W with universal input or 110 W with a 230 Vac input. The bottom-skip function skips the first bottom of VDS and turns on the MOSFET at the second bottom point, to minimize an increase of operational frequency at light output load, improving system-level efficiency over the entire load range.

There are two standby functions available to reduce the input power under very light load conditions. The first is an auto-burst mode operation that is internally triggered by periodic sensing, and the other is a manual standby mode, which is executed by clamping the secondary output. In general applications, the manual standby mode reduces the input power further compared to the auto-burst mode.

The soft-start function minimizes surge voltage and reduces power stress to the MOSFET and to the secondary rectifying

STR-W6765 Maximum Ratings

Parameter
Symbol
Terminal
Conditions
Rating
Unit
Drain Current1
IDpeak
1 - 3
Single pulse
11.2
A
Maximum Switching Current2
IDmax
1 - 3
TA = 20°C to 125°C
11.2
A
Single Pulse Avalanche Energy3
EAS
1 - 3
Single pulse, VDD = 99 V, L = 20 mH,
ILpeak = 5.8 A
300
mJ
Input Voltage for Controller (MIC)
VCC
4 - 3
 
35
V
SS/OLP Terminal Voltage
VSSOLP
5 - 3
 
0.5 to 6.0
V
FB Terminal Inflow Current
IFB
6 - 3
 
10
mA
FB Terminal Voltage
VFB
6 - 3
IFB within the limits of IFB
0.5 to 9.0
V
OCP/BD Terminal Voltage
VOCPBD
7 - 3
 
1.5 to 5.0
V
MOSFET Power Dissipation4
PD1
1 - 3
With infinite heatsink
28.7
W
Without heatsink
1.3
Controller (MIC) Power Dissipation
PD2
4 - 3
VCC * ICC
0.8
W
Operating Internal Leadframe Temperature
TF
-
Refer to TOP
20 to 115
°C
Operating Ambient Temperature
TOP
-
 
20 to 115
°C
Storage Temperature
Tstg
-
 
40 to 125
°C
Junction Temperature
TJ
-
 
150
°C
1Refer to figure 2
2IDMAX is the drain current determined by the drive voltage of the IC and the threshold voltage, Vth, of the MOSFET
3Refer to figure 3
4Refer to figure 5

STR-W6765 Features

▪ Quasi-resonant topology IC ⇒ Low EMI noise and soft switching
▪ Bottom-skip operation ⇒ Improved system efficiency
over the entire output load by avoiding increase of switching frequency
▪ Standby burst mode operation ⇒ Lowers input power at
very light output load condition
▪ Avalanche-guaranteed MOSFET ⇒ Improves systemlevel
reliability and does not require VDSS derating
▪ 800 V / 1.8 , 52 to 110 W (Universal/230 Vac input)

STR-W6765 datasheet

STR001BG6SPGF
PDF/DataSheet Download

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