Purchase STRH40N25FSY3, In-stock STRH40N25FSY3 From SeekIC.
Part Number: STRH40N25FSY3
Description: This Power MOSFET series realized with STMicroelectronics unique STripFET processhas specificall...
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STRH40N25FSY3
-
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DataSheet
General Description
STRH40N25FSY3 General Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to improve immunity to space effect. It is therefore suitable as power switch in mainly high-efficiency DC-DC converters and Motor Control applications. It is also intended for any application with low gate charge drive requirements.
STRH40N25FSY3 Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source voltage (VGS = 0) |
250 |
V |
|
VGS |
Gate-source voltage |
±16 |
V |
|
ID1 |
Drain current (continuous) at TC= 25°C |
36 |
A |
|
ID1 |
Drain current (continuous) at TC= 100°C |
23 |
A |
|
IDM2 |
Drain current (pulsed) |
144 |
A |
|
PTOT1 |
Total dissipation at TC= 25°C |
278 |
W |
|
dv/dt |
Peak diode recovery voltage slope |
4 |
V/ns |
|
Tstg |
Storage temperature |
-55to150 |
°C |
|
Tj |
Max. operating junction temperature |
150 |
°C |
2. Pulse width limited by safe operating area
3. ISD 40A, di/dt 400A/s, VDD = 80% V(BR)DSS
STRH40N25FSY3 Features
Low RDS(on)
Fast switching
Single event effect (SEE) hardened
Low total gate charge
Light weight
100% avalanche tested
Application oriented characterization
Hermetically sealed
Heavy ion SOA
100kRad TID
SEL & SEGR with 34Mev/cm²/mg LET ions
Fast switching
Single event effect (SEE) hardened
Low total gate charge
Light weight
100% avalanche tested
Application oriented characterization
Hermetically sealed
Heavy ion SOA
100kRad TID
SEL & SEGR with 34Mev/cm²/mg LET ions
STRH40N25FSY3 Typical Application
Satellite
High reliability applications
High reliability applications
STR001BG6SPGF
PDF/DataSheet Download
- Datasheet: STR001BG6SPGF
- File Size: 230886 KB
- Manufacturer:
- Click here to Download
- ·STR0R4BG6SPGF
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- 230886 KB
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- 230886 KB
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