Features: Low RDS(on) Fast switching Single event effect (SEE) hardened Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy ion SOA 100kRad TID SEL & SEGR with 34Mev/cm²/mg LET ionsApplication Satellite High reliability...
STRH40N25FSY3: Features: Low RDS(on) Fast switching Single event effect (SEE) hardened Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy ion ...
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|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source voltage (VGS = 0) |
250 |
V |
|
VGS |
Gate-source voltage |
±16 |
V |
|
ID1 |
Drain current (continuous) at TC= 25°C |
36 |
A |
|
ID1 |
Drain current (continuous) at TC= 100°C |
23 |
A |
|
IDM2 |
Drain current (pulsed) |
144 |
A |
|
PTOT1 |
Total dissipation at TC= 25°C |
278 |
W |
|
dv/dt |
Peak diode recovery voltage slope |
4 |
V/ns |
|
Tstg |
Storage temperature |
-55to150 |
°C |
|
Tj |
Max. operating junction temperature |
150 |
°C |
This Power MOSFET series STRH40N25FSY3 realized with STMicroelectronics unique STripFET process has specifically been designed to improve immunity to space effect.STRH40N25FSY3 is therefore suitable as power switch in mainly high-efficiency DC-DC converters and Motor Control applications. STRH40N25FSY3 is also intended for any application with low gate charge drive requirements.