STS11NF30L

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 10.5 mOhms
Package / Case : SO N
Gate-Source Breakdown Voltage : +/- 18 V


Application

SPECIFICALLYDESIGNED AND OPTIMISEDFOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCs


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current (continuous) at Tc = 25	11	A
ID	Drain Current (continuous) at Tc = 100	7	A
IDM(`)	Drain Current (pulsed)	44	A
PTOT	Total Dissipation at Tc = 25	2.5	W

(•)Pulse width limited by safe operating area


Description

This application specific Power Mosfet STS11NF30L is the third generation of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor STS11NF30L  shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, STS11NF30L  gives the best performance in terms of both conductionand switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.

Parameters:

Technical/Catalog Information	STS11NF30L
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	10.5 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds	1440pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	30nC @ 5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS11NF30L STS11NF30L 497 4121 2 ND 49741212ND 497-4121-2