ApplicationSPECIFICALLYDESIGNED AND OPTIMISEDFOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCsPinoutSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain- gate Voltage (RGS = 20 k) 30 V VGS Gate-...
STS11NF3LL: ApplicationSPECIFICALLYDESIGNED AND OPTIMISEDFOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCsPinoutSpecifications Symbol Parameter Value Unit VDS Drain-source Vol...
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|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
11 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
7 |
A |
|
IDM(`) |
Drain Current (pulsed) |
44 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
2.5 |
W |
This application specific Power Mosfet STS11NF3LL is the third generation of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor STS11NF3LL shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, STS11NF3LL gives the best performance in terms of both conductionand switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.