STS12NH3LL

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 12 A
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.008 Ohms


Features:

·TYPICAL RDS(on) = 0.008 Ω @ 10V
· OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5 V
· SWITCHING LOSSES REDUCED
· LOW THRESHOLD DEVICE
· LOW INPUT CAPACITANCE


Application

HIGH FREQUENCY DC-DC CONVERTERS FOR COMPUTER AND TELECOM


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-Source Voltage	± 16	V
ID	Drain Current (continuous) at Tc = 25	12	A
ID	Drain Current (continuous) at Tc = 100	7.5	A
IDM(`)	Drain Current (pulsed)	48	A
PTOT	Total Dissipation at Tc = 25	2.5	W
Tstg	Storage Temperature	-55 to 150
Tj	Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area


Description

The STS12NH3LL is based on the latest generation of ST's proprietary "STripFET™" technology. An innovative layout enables the device to also exhibit extremely low gate charge for the most demanding requirements as high-side switch in highfrequency DC-DC converters. It's therefore ideal for high-density converters in Telecom and Computer applications.

Parameters:

Technical/Catalog Information	STS12NH3LL
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	10.5 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds	965pF @ 25V
Power - Max	2.7W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	12nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS12NH3LL STS12NH3LL 497 4122 2 ND 49741222ND 497-4122-2