STS12NH3LL

MOSFET N-Ch 30 Volt 12 Amp

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SeekIC No. : 00161500 Detail

STS12NH3LL: MOSFET N-Ch 30 Volt 12 Amp

floor Price/Ceiling Price

Part Number:
STS12NH3LL
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2017/7/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 0.008 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 12 A
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.008 Ohms


Features:

·TYPICAL RDS(on) = 0.008 Ω @ 10V
· OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5 V
· SWITCHING LOSSES REDUCED
· LOW THRESHOLD DEVICE
· LOW INPUT CAPACITANCE



Application

HIGH FREQUENCY DC-DC CONVERTERS FOR COMPUTER AND TELECOM


Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain- gate Voltage (RGS = 20 k)
30
V
VGS
Gate-Source Voltage
± 16
V
ID
Drain Current (continuous) at Tc = 25
12
A
ID

Drain Current (continuous) at Tc = 100
7.5
A
IDM(`)
Drain Current (pulsed)
48
A
PTOT
Total Dissipation at Tc = 25
2.5
W
Tstg
Storage Temperature
-55 to 150
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area


Description

The STS12NH3LL is based on the latest generation of ST's proprietary "STripFET™" technology. An innovative layout enables the device to also exhibit extremely low gate charge for the most demanding requirements as high-side switch in highfrequency DC-DC converters. It's therefore ideal for high-density converters in Telecom and Computer applications.




Parameters:

Technical/Catalog InformationSTS12NH3LL
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs10.5 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 965pF @ 25V
Power - Max2.7W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs12nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STS12NH3LL
STS12NH3LL
497 4122 2 ND
49741222ND
497-4122-2



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