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STS1HNC60

Application·SWITCH MODE LOW POWER SUPPIES (SMPS)·CFLPinoutSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain- gate Voltage (RGS = 20 k) 600 V VGS Gate-Source Voltage ± 30 V ID Drain Current (continuous) at Tc = 25 0.36 A ...

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SeekIC No. : 004508749 Detail

STS1HNC60: Application·SWITCH MODE LOW POWER SUPPIES (SMPS)·CFLPinoutSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain- gate Voltage (RGS = 20 k) ...

STS1HNC60 Data Sheet

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Part Number:
STS1HNC60
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

·SWITCH MODE LOW POWER SUPPIES (SMPS)
·CFL


Pinout

Connection Diagram


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain- gate Voltage (RGS = 20 k) 600 V
VGS Gate-Source Voltage ± 30 V
ID Drain Current (continuous) at Tc = 25 0.36 A
ID
Drain Current (continuous) at Tc = 100 		0.22 A
IDM(`) Drain Current (pulsed) 1.44 A
PTOT Total Dissipation at Tc = 25 2.5 W
Derating Factor 0.028 W/
dv/dt(1) Peak Diode Recovery voltage slope 3.5 V/ns
Tstg Storage Temperature 65 to 150
Tj
 Max. Operating Junction Temperature 150

(`) Pulse width limited by safe operating area (1) ISD 0.36A, di/dt100A/µs, VDD V(BR)DSS, Tj TJMAX.




Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics STS1HNC60  has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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