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STS20NHS3LL

Features: · Optimal RDS(on) x Qg trade-off @ 4.5V· Reduced switching losses· Reduced conduction losses· Improved junction-case thermal resistanceApplication· Switching applicationSpecifications Symbol Item Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VGS Gat...

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SeekIC No. : 004508750 Detail

STS20NHS3LL: Features: · Optimal RDS(on) x Qg trade-off @ 4.5V· Reduced switching losses· Reduced conduction losses· Improved junction-case thermal resistanceApplication· Switching applicationSpecifications ...

STS20NHS3LL Data Sheet

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Part Number:
STS20NHS3LL
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Optimal RDS(on) x Qg trade-off @ 4.5V
· Reduced switching losses
· Reduced conduction losses
· Improved junction-case thermal resistance


Application

· Switching application


Specifications

Symbol
Item
Value
Unit
VDS
 Drain-source Voltage (VGS = 0)
30
V
VGS
 Gate- source Voltage
±16
V
Id(1)
 Drain Current (continuos) at TC = 25°C
20
A
Id
 Drain Current (continuos) at TC = 100°C
12.6
A
IDM(2)
 Drain Current (pulsed)
80
A
PTOT
 Total Dissipation at TC = 25°C
2.7
W
TJ
TSTG
 Operating Junction Temperature
Storage Temperature
-55 to 150




Description

This STS20NHS3LL  utilizes the latest advanced design rules of ST's proprietary STripFET™ technology and a proprietary process for integrating a  monolithic Schottky diode. The new Power MOSFET STS20NHS3LL  is optimized for the most demanding synchronous switch function in DC-DC converter for Computer and Telecom.




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