STS4C3F60L

Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.055 Ohms
Drain-Source Breakdown Voltage : +/- 60 V
Continuous Drain Current : 4 A, - 3 A


Features:

 TYPICAL RDS(on) (N-Channel) = 0.045 Ω
  TYPICAL RDS(on) (P-Channel) = 0.100 Ω
 STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
  LOW THRESHOLD DRIVE


Application

 DC/DC CONVERTERS
  BACK LIGHT INVERTER FOR LCD


Pinout

Description

This MOSFET STS4C3F60L is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parameters:

Technical/Catalog Information	STS4C3F60L
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	4A, 3A
Rds On (Max) @ Id, Vgs	55 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	1030pF @ 25V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	20.4nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS4C3F60L STS4C3F60L 497 4396 2 ND 49743962ND 497-4396-2