STS4DNF60L

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 15 V
Configuration : Dual Dual Drain
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 55 mOhms
Package / Case : SO N


Application




Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	60	V
VDGR	Drain- gate Voltage (RGS = 20 k)	60	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current (continuous) at Tc = 25 Single Operation	4	A
ID	Drain Current (continuous) at Tc = 100 Single Operation	2.5	A
IDM(`)	Drain Current (pulsed)	16	A
PTOT	Total Dissipation at TC = 25°C Dual OperationTotal Dissipation at TC = 25°C Single Operation	2 1.6	W W

(`) Pulse width limited by safe operating area.


Description

This Power MOSFET STS4DNF60L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parameters:

Technical/Catalog Information	STS4DNF60L
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	55 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	1030pF @ 25V
Power - Max	2W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	15nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS4DNF60L STS4DNF60L 497 3226 6 ND 49732266ND 497-3226-6