STS4DNFS30L

MOSFET N-Ch 30 Volt 4 Amp

product image

STS4DNFS30L Picture
SeekIC No. : 00151359 Detail

STS4DNFS30L: MOSFET N-Ch 30 Volt 4 Amp

floor Price/Ceiling Price

US $ .49~.8 / Piece | Get Latest Price
Part Number:
STS4DNFS30L
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.8
  • $.64
  • $.56
  • $.49
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 55 mOhms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO N Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 4 A
Gate-Source Breakdown Voltage : +/- 16 V
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 55 mOhms
Package / Case : SO N


Pinout

  Connection Diagram




Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain- gate Voltage (RGS = 20 k)
30
V
VGS
Gate-Source Voltage
± 20
V
ID
Drain Current (continuous) at Tc = 25
8
A
ID

Drain Current (continuous) at Tc = 100
5
A
IDM(`)
Drain Current (pulsed)
32
A
PTOT
Total Dissipation at TC = 25°C
2.5

W

Symbol
Parameter
Value
Unit
VRRM
Repetitive Peak Reverse Voltage
30
V
IF(RMS)
RMS Forward Current
20
A
IF(AV)
Average Forward Current
TL=125
=0.5
3
A
IFSM
Surge Non Repetit ive Forward Current
tp= 10 ms
Sinusoidal
75
A
IRRM
Repetitive Peak Reverse Current
tp = 2 µs
F=1 kHz
1
A
IRSM
Non Repetitive Peak Reverse Current
tp=100 µs
1
A
dv/dt
Critical Rate Of Rise Of Reverse Voltage
10000
V/µs
(`) Pulse width limited by safe operating area.


Description

This STS4DNFS30L associates the latest low voltage STripFET™ in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.




Parameters:

Technical/Catalog InformationSTS4DNFS30L
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C4A
Rds On (Max) @ Id, Vgs55 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds 330pF @ 25V
Power - Max2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs9nC @ 5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureDiode (Isolated)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STS4DNFS30L
STS4DNFS30L
497 3227 2 ND
49732272ND
497-3227-2



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Undefined Category
Power Supplies - External/Internal (Off-Board)
Optical Inspection Equipment
Boxes, Enclosures, Racks
Industrial Controls, Meters
View more