STS4DPF20L

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual Dual Drain
Continuous Drain Current : 4 A
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 80 mOhms
Package / Case : SO N


Application

·BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
·POWER MANAGEMENT IN CELLULAR PHONES


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	20	V
VDGR	Drain- gate Voltage (RGS = 20 k)	20	V
VGS	Gate-Source Voltage	± 16	V
ID	Drain Current (continuous) at Tc = 25 Single Operation	4	A
ID	Drain Current (continuous) at Tc = 100 Single Operation	2.5	A
IDM(`)	Drain Current (pulsed)	16	A
PTOT	Total Dissipation at TC = 25°C Dual Operation Total Dissipation at TC = 25°C Single Operation	1.6 2	W W

(`) Pulse width limited by safe operating area.


Description

This Power MOSFET STS4DPF20L  is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parameters:

Technical/Catalog Information	STS4DPF20L
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	80 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	1350pF @ 25V
Power - Max	2W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	16nC @ 5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS4DPF20L STS4DPF20L 497 8042 6 ND 49780426ND 497-8042-6