STS4DPF30L

Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Configuration : Dual Dual Drain
Resistance Drain-Source RDS (on) : 0.08 Ohms
Continuous Drain Current : 4 A
Gate-Source Breakdown Voltage : +/- 16 V


Application

·BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
·POWER MANAGEMENT IN CELLULAR PHONES
·DC-DC CONVERTER


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-Source Voltage	± 16	V
ID	Drain Current (continuous) at Tc = 25 Single Operation	4	A
ID	Drain Current (continuous) at Tc = 100 Single Operation	2.5	A
IDM(`)	Drain Current (pulsed)	16	A
PTOT	Total Dissipation at TC = 25°CDual Operation Total Dissipation at TC = 25°CSingle Operation	2.0 1.6	W W

(`) Pulse width limited by safe operating area.


Description

This Power MOSFET STS4DPF30L  is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parameters:

Technical/Catalog Information	STS4DPF30L
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	80 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	1350pF @ 25V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	16nC @ 5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS4DPF30L STS4DPF30L 497 3228 2 ND 49732282ND 497-3228-2