MOSFET P-Ch 30 Volt 5 Amp
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V | ||
| Gate-Source Breakdown Voltage : | +/- 16 V | Continuous Drain Current : | 4 A | ||
| Resistance Drain-Source RDS (on) : | 0.045 Ohms | Configuration : | Single Dual Drain | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SO-8 | Packaging : | Reel |

|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
4 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
3.4 |
A |
|
IDM(`) |
Drain Current (pulsed) |
16 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
1.6 |
W |
This STS4DPFS30L associates the latest low voltage STripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.
| Technical/Catalog Information | STS4DPFS30L |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 5A |
| Rds On (Max) @ Id, Vgs | 55 mOhm @ 2.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1350pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 16nC @ 5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Diode (Isolated) |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | STS4DPFS30L STS4DPFS30L 497 4397 1 ND 49743971ND 497-4397-1 |