Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Mounting Style
: SMD/SMT
Package / Case
: SO-8
Packaging
: Reel
Drain-Source Breakdown Voltage
: 100 V
Maximum Operating Temperature
: + 150 C
Configuration
: Single Quad Drain Triple Source
Resistance Drain-Source RDS (on)
: 0.065 Ohms
Continuous Drain Current
: 4 A
Application·HIGH-EFFICIENCY DC-DC CONVERTERS
·UPS AND MOTOR CONTROLPinout
Specifications
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
100 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
100 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
4 |
A |
|
ID |
Drain Current (continuous) at Tc = 100
|
2.5 |
A |
|
IDM(`) |
Drain Current (pulsed) |
16 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
2.5 |
W |
(•)Pulse width limited by safe operating area
DescriptionThis MOSFET STS4NF100 series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. STS4NF100 is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. STS4NF100 is also intended for any applications with low gate drive requirements.
Parameters: | Technical/Catalog Information | STS4NF100 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 4A |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 2A, 10V |
| Input Capacitance (Ciss) @ Vds | 870pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 41nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STS4NF100
STS4NF100
497 8043 1 ND
49780431ND
497-8043-1
|
STS4NF100 Data Sheet
