STS7NF30L

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Package / Case : SO-8
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Resistance Drain-Source RDS (on) : 0.025 Ohms
Continuous Drain Current : 7 A


Application




Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current (continuous) at Tc = 25	7	A
ID	Drain Current (continuous) at Tc = 100	4.4	A
IDM(`)	Drain Current (pulsed)	42	A
PTOT	Total Dissipation at TC = 25°C	2.5	W

(`) Pulse width limited by safe operating area.


Description

This Power MOSFET STS7NF30L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.