STS7NF60L

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 7.5 A
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 16 V
Package / Case : SO N
Resistance Drain-Source RDS (on) : 19.5 mOhms


Application




Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	20	V
VDGR	Drain- gate Voltage (RGS = 20 k)	20	V
VGS	Gate-Source Voltage	± 12	V
ID	Drain Current (continuous) at Tc = 25	5	A
ID	Drain Current (continuous) at Tc = 100	3	A
IDM(`)	Drain Current (pulsed)	20	A
PTOT	Total Dissipation at TC = 25°C	2.5	W

EAS (1)

Single Pulse Avalanche Energy

350

mJ

(`) Pulse width limited by safe operating area.      (1) Starting T_j = 25 oC, I_D = 7.5 A V_DD = 30 V


Description

This Power MOSFET STS7NF60L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parameters:

Technical/Catalog Information	STS7NF60L
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	7.5A
Rds On (Max) @ Id, Vgs	19.5 mOhm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds	1700pF @ 25V
Power - Max	2.5W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	34nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS7NF60L STS7NF60L 497 4757 1 ND 49747571ND 497-4757-1