MOSFET P-Ch 30 Volt 7 Amp
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 7 A | ||
Resistance Drain-Source RDS (on) : | 0.021 Ohms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SO-8 | Packaging : | Reel |
Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
VGS |
Gate-Source Voltage |
± 20 |
V |
ID |
Drain Current (continuous) at Tc = 25 |
7 |
A |
ID |
Drain Current (continuous) at Tc = 100 |
4.4 |
A |
IDM(`) |
Drain Current (pulsed) |
28 |
A |
PTOT |
Total Dissipation at Tc = 25 |
2.5 |
W |
This Power Mosfet STS7PF30L is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Technical/Catalog Information | STS7PF30L |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 7A |
Rds On (Max) @ Id, Vgs | 21 mOhm @ 3.5A, 10V |
Input Capacitance (Ciss) @ Vds | 2600pF @ 25V |
Power - Max | 2.5W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 7nC @ 4.5V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STS7PF30L STS7PF30L 497 3233 2 ND 49732332ND 497-3233-2 |