Mounting Style
: SMD/SMT
Packaging
: Reel
Drain-Source Breakdown Voltage
: 30 V
Maximum Operating Temperature
: + 150 C
Transistor Polarity
: N and P-Channel
Configuration
: Dual Dual Drain
Gate-Source Breakdown Voltage
: +/- 16 V
Package / Case
: SO N
Continuous Drain Current
: 8 A at N Channel, 5.4 A at P Channel
Resistance Drain-Source RDS (on)
: 22 mOhms at N Channel, 55 mOhms at P Channel
Features: ` TYPICAL RDS(on) (N-Channel) = 0.018
` TYPICAL RDS(on) (P-Channel) = 0.045
` CONDUCTION LOSSES REDUCED
` SWITCHING LOSSES REDUCED
` LOW THRESHOLD DRIVE
` STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLYApplication· DC/DC CONVERTERS
· BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
· POWER MANAGEMENT IN CELLULAR PHONES
· DC MOTOR DRIVESpecifications
|
Symbol |
Parameter |
Value |
Unit |
|
|
|
N-CHANNEL |
P-CHANNEL |
|
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain-gate Voltage (RGS = 20 k) |
30 |
V |
|
VGS |
Gate- source Voltage |
± 16 |
± 16 |
V |
|
ID |
Drain Current (continuous) at TC = 25°C
Single Operating |
8 |
4.2 |
A |
|
ID |
Drain Current (continuous) at TC = 100°C
Single Operating |
6.4 |
3.1 |
A |
|
IDM (`) |
Drain Current (pulsed) |
32 |
16.8 |
A |
|
PTOT |
Total Dissipation at TC = 25°C Dual Operating
Total Dissipation at TC = 25°C Single Operating |
1.6
2 |
W
W |
|
Tj
Tstg |
Operating Junction Temperature
Storage Temperature |
150
-55 to 150 |
°C
°C |
(`) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversedDescriptionThis MOSFET STS8C5H30L is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Parameters: | Technical/Catalog Information | STS8C5H30L |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 8A, 4.2A |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 4A, 10V |
| Input Capacitance (Ciss) @ Vds | 857pF @ 25V |
| Power - Max | 2W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 10nC @ 5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STS8C5H30L
STS8C5H30L
497 4398 1 ND
49743981ND
497-4398-1
|
STS8C5H30L Data Sheet
