STS8DNH3LL

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Continuous Drain Current : 8 A
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.022 Ohms


Application

SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCS


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-Source Voltage	± 16	V
ID	Drain Current (continuous) at Tc = 25	8	A
ID	Drain Current (continuous) at Tc = 100	5	A
IDM(`)	Drain Current (pulsed)	32	A
PTOT	Total Dissipation at Tc = 25	2	W

(•)Pulse width limited by safe operating area


Description

This application specific MOSFET STS8DNH3LL is the Third generation of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.

Parameters:

Technical/Catalog Information	STS8DNH3LL
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	22 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	857pF @ 25V
Power - Max	2W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	10nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS8DNH3LL STS8DNH3LL 497 4399 1 ND 49743991ND 497-4399-1