STS9NF30L

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.015 Ohms
Gate-Source Breakdown Voltage : +/- 18 V


Application

SPECIFICALLYDESIGNED AND OPTIMISEDFOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCs


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current (continuous) at Tc = 25	9	A
ID	Drain Current (continuous) at Tc = 100	5.6	A
IDM(`)	Drain Current (pulsed)	36	A
PTOT	Total Dissipation at Tc = 25	2.5	W

(•)Pulse width limited by safe operating area


Description

This application specific Power Mosfet STS9NF30L is the third generation of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conductionand switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.

Parameters:

Technical/Catalog Information	STS9NF30L
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	20 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds	730pF @ 25V
Power - Max	2.5W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	12.5nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS9NF30L STS9NF30L 497 3234 1 ND 49732341ND 497-3234-1