STSA851

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Package / Case : TO-92
DC Collector/Base Gain hfe Min : 150
Emitter- Base Voltage VEBO : 7 V
Maximum Operating Frequency : 130 MHz
Maximum DC Collector Current : 5 A
Packaging : Bulk


Application

·EMERGENCY LIGHTING
·VOLTAGE REGULATORS
·RELAY DRIVERS
·HIGH EFFICIENCY LOW VOLTAGE SWITCHING APPLICATIONS


Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage (IE = 0)	150	V
VCEO	Collector-Emitter Voltage (IB = 0)	60	V
VEBO	Emitter-Base Voltage (IC = 0)	7	V
IC	Collector Current	5	A
ICM	Collector Peak Current(tp < 5 ms)	15	A
IB	Base Current	1	A
IBM	Base Peak Current	-0.5	A
PTOT	Total Dissipation at Tamb= 25	1.1	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The STSA851 is manufactured in NPN Planar Technology by using a "Base Island" layout.

The resulting Transistor STSA851 shows exceptional high gain performance coupled with very low saturation voltage.

Parameters:

Technical/Catalog Information	STSA851
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	5A
Power - Max	1.1W
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 2A, 1V
Vce Saturation (Max) @ Ib, Ic	120mV @ 50mA, 1A
Frequency - Transition	130MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3 (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STSA851 STSA851 497 3235 ND 4973235ND 497-3235