STT2PF60L

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 15 V
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.25 Ohms
Configuration : Single Quad Drain
Continuous Drain Current : 2 A
Package / Case : SOT-23-6


Application

· DC MOTOR DRIVE
·DC-DC CONVERTERS
· BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
· POWER MANAGEMENT IN PORTABLE/DESKTOP PCs
· CELLULAR


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	60	V
VDGR	Drain- gate Voltage (RGS = 20 k)	60	V
VGS	Gate-Source Voltage	±15	V
ID	Drain Current (continuous) at Tc = 25	2	A
ID	Drain Current (continuous) at Tc = 100	1.3	A
IDM(`)	Drain Current (pulsed)	8	A
PTOT	Total Dissipation at Tc = 25	1.6	W

(•)Pulse width limited by safe operating area


Description

This Power MOSFET STT2PF60L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parameters:

Technical/Catalog Information	STT2PF60L
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	2A
Rds On (Max) @ Id, Vgs	250 mOhm @ 1A, 10V
Input Capacitance (Ciss) @ Vds	313pF @ 25V
Power - Max	1.6W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	7nC @ 10V
Package / Case	SOT-23-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STT2PF60L STT2PF60L 497 8045 6 ND 49780456ND 497-8045-6