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MFG:ST


Part Number: STT818B
MFG: ST
Description: The device is manufactured in low voltage PNP Planar Technology by using a "Base Island" layout.
MFG:ST


MFG: ST
Description: The device is manufactured in low voltage PNP Planar Technology by using a "Base Island" layout.
The device is manufactured in low voltage PNP Planar Technology by using a "Base Island" layout.
The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.
|
Symbol |
Parameter |
Value |
Unit |
|
VCBO |
Collector-Base Voltage (IE = 0) |
-30 |
V |
|
VCEO |
Collector-Emitter Voltage (IB = 0) |
-30 |
V |
|
VEBO |
Emitter-Base Voltage (IC = 0) |
-5 |
V |
|
IC |
Collector Current |
-3 |
A |
|
ICM |
Collector Peak Current |
-6 |
A |
| IB | Base Current | -0.2 | A |
|
IBM |
Base Peak Current |
-0.5 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
1.2 |
W |
|
Tstg |
Storage Temperature |
-65 to 150 |
|
|
Tj |
Max. Operating Junction Temperature |
150 |
STT818B
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