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Part Number: STT818B

 

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Description: The device is manufactured in low voltage PNP Planar Technology by using a "Base Island" layout.

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STT818B General Description


The device is manufactured in low voltage PNP Planar Technology by using a "Base Island" layout.

The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.

STT818B Maximum Ratings

Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage (IE = 0)
-30
V
VCEO
Collector-Emitter Voltage (IB = 0)
-30
V
VEBO
Emitter-Base Voltage (IC = 0)
-5
V
IC
Collector Current
-3
A
ICM
Collector Peak Current
-6
A
IB Base Current -0.2 A
IBM
Base Peak Current
-0.5
A
PTOT
Total Dissipation at Tc = 25
1.2
W
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150

STT818B Typical Application

·POWER MANAGEMENT IN PORTABLE EQUIPMENTS
·SWITCHING REGULATOR IN BATTERY CHARGER APPLICATIONS

STT818B Connection Diagram

STT818B  Connection Diagram

STT818B datasheet

STT818B
PDF/DataSheet Download

  • Datasheet: STT818B
  • File Size: 145911 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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