STT818B

Maximum Operating Frequency :
DC Collector/Base Gain hfe Min : 100
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Maximum DC Collector Current : 3 A
Collector- Emitter Voltage VCEO Max : 30 V
Configuration : Single Quad Collector
Package / Case : SOT-23-6


Application

·POWER MANAGEMENT IN PORTABLE EQUIPMENTS
·SWITCHING REGULATOR IN BATTERY CHARGER APPLICATIONS


Pinout




Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage (IE = 0)	-30	V
VCEO	Collector-Emitter Voltage (IB = 0)	-30	V
VEBO	Emitter-Base Voltage (IC = 0)	-5	V
IC	Collector Current	-3	A
ICM	Collector Peak Current	-6	A
IB	Base Current	-0.2	A
IBM	Base Peak Current	-0.5	A
PTOT	Total Dissipation at Tc = 25	1.2	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The STT818B is manufactured in low voltage PNP Planar Technology by using a "Base Island" layout.

The resulting Transistor STT818B shows exceptional high gain performance coupled with very low saturation voltage.

Parameters:

Technical/Catalog Information	STT818B
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	3A
Power - Max	1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 500mA, 1V
Vce Saturation (Max) @ Ib, Ic	500mV @ 20mA, 2A
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Packaging	Digi-Reel?
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STT818B STT818B 497 6589 6 ND 49765896ND 497-6589-6