Diode Type: Standard
Current - Average Rectified (Io) (per Diode): -
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: -
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Capacitance @ Vr, F: -
Current - Average Rectified (Io): 2A
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Current - Reverse Leakage @ Vr: 20µA @ 1200V
Manufacturer: STMicroelectronics
Voltage - Forward (Vf) (Max) @ If: 1.65V @ 2A
Reverse Recovery Time (trr): 115ns
Series: TURBOSWITCH™
Features: SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION ANDRECTIFICATION
ULTRA-FAST ANDSOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR
HIGHFREQUENCY OPERATION
HIGH REVERSE VOLTAGECAPABILITYSpecifications
| Symbol |
Parameter |
Value |
Unit |
| VRRM |
Repetitive peak reverse voltage |
1200 |
V |
| VRSM |
Non repetitive peak reverse voltage |
1200 |
V |
| IF(RMS) |
RMS forward current |
10 |
A |
| IFRM |
Repetitive peak forward current |
tp = 5 s F = 5kHz square |
20 |
A |
| IFSM |
Surge non repetitive forward current |
tp = 10ms sinusoidal |
25 |
A |
| Tstg |
Storage temperature range |
- 65 to + 150 |
°C |
| Tj |
Maximum operating junction temperature |
125 |
°C |
DescriptionTURBOSWITCH STTA212S 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes.
Due to their optimized switching performances they aloso highly decrease power losses in any associated switching IGBT or MOSFET in all "freewheel mode" operations and is particulary suitable and efficient in motor control circuitries, or in primary of SMPS as snubber, clamping or demagnetizingdiodes secondaryof SMPSas high voltage rectifier diodes. They are also suitable for the secondary of SMPS as high voltage rectifier diodes.
STTA212S Data Sheet
