MOSFET N-CH 65V 12A MDMESH
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Features: The built-in back-to-back Zener diodes have specifically been designed to enhance not on...
Features: The built-in back-to-back Zener diodes have specifically been designed to enhance not on...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
| Gate-Source Breakdown Voltage : | 25 V | Continuous Drain Current : | 12 A | ||
| Resistance Drain-Source RDS (on) : | 0.299 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | IPAK | Packaging : | Tube |
| Technical/Catalog Information | STU16N65M5 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 12A |
| Rds On (Max) @ Id, Vgs | 299 mOhm @ 6A, 10V |
| Input Capacitance (Ciss) @ Vds | 1250pF @ 100V |
| Power - Max | 90W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 45nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STU16N65M5 STU16N65M5 |