Features: ·Super high dense cell design for low R DS (ON).·Rugged and reliable.·TO252-4L package.·ESD Protected.Specifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS 40 V Gate-S ource Voltage VGS ±20 V Drain Current-Continuous @ Ta 25 ID 16 A 70 13.7 ...
STU408D: Features: ·Super high dense cell design for low R DS (ON).·Rugged and reliable.·TO252-4L package.·ESD Protected.Specifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS 40 ...
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| Parameter | Symbol | Limit | Unit | |
| Drain-S ource Voltage | VDS | 40 | V | |
| Gate-S ource Voltage | VGS | ±20 | V | |
| Drain Current-Continuous @ Ta | 25 | ID | 16 | A |
| 70 | 13.7 | |||
| -Pulseda | IDM | 50 | A | |
| Drain-S ource Diode Forward Current | IS | 8 | A | |
| Maximum Power Dissipation | Ta= 25 | PD | 11 | W |
| Ta= 70 | 7.7 | |||
| Operating Junction and S torage Temperature R ange |
TJ , TSTG | -55 to 175 | ||