Specifications Parameter N-Channel P-Channel Units VDS Drain-Source Voltage 40 -40 V VGS Gate-to-Source Voltage ±20 ±20 V ID Drain Current-Continuous a TC=25 15 -12 A TC=70 12 -10 IDM -Pulsed 43 -36 A EAS S...
STU411D: Specifications Parameter N-Channel P-Channel Units VDS Drain-Source Voltage 40 -40 V VGS Gate-to-Source Voltage ±20 ±20 V ID Drain Current-Continu...
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|
Parameter |
N-Channel |
P-Channel |
Units | ||
| VDS | Drain-Source Voltage |
40 |
-40 |
V | |
| VGS | Gate-to-Source Voltage |
±20 |
±20 |
V | |
| ID | Drain Current-Continuous a | TC=25 |
15 |
-12 |
A |
| TC=70 |
12 |
-10 | |||
| IDM | -Pulsed |
43 |
-36 |
A | |
| EAS | Single Pulse Avalanche Energy |
38 |
mJ | ||
| TJ, TSTG | Operating Junction and Storage Temperature Range |
-55 to 150 |
|||
| PD | Maximum Power Dissipation a | TC=25 |
11 |
W | |
| TC=70 |
6.7 | ||||