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STU7NB90

Features: TYPICAL RDS(on) = 1.1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREADApplicationHIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENTSpecifications ...

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SeekIC No. : 004508937 Detail

STU7NB90: Features: TYPICAL RDS(on) = 1.1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREADApplicationHIGH CURRENT, HIGH SPEED...

STU7NB90 Data Sheet

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Part Number:
STU7NB90
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

 TYPICAL RDS(on) = 1.1
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED VOLTAGE SPREAD


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENT


Specifications

Symbol
Parameter
Value
Unit
STU7NB90 STU7NB90I
VDS
 Drain-source Voltage (VGS = 0)
900
V
VDGR
 Drain- gate Voltage (RGS = 20 k)
900
V
VGS
 Gate-source Voltage
±30
V
ID
 Drain Current (continuous) at Tc = 25 7.3
7.3 (*)
A
ID
 Drain Current (continuous) at Tc = 100 4.6
4.6 (*)
A
IDM(`)
 Drain Current (pulsed) 29.2
29.2 (*)
A
PToT
 Total Dissipation at Tc = 25 170
60
W
 Derating Factor 1.36
0.47
W/
dv/dt
 Peak Diode Recovery voltage slope
4
V/ns
VISO
 Insulation Withstand Voltage (DC)
-
2500
V
Tstg
 Storage Temperature
-65 to 150
°C
Tj
 Max. Operating Junction Temperature
150
°C
(•)Pulse width limited by safe operating area  (1) ISD 7.3 A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.
                                                                         (*) Current Limited by Package


Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics STU7NB90 has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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