STU95N2LH5

MOSFET N-Ch, 25V-0.0038ohms 80A

product image

STU95N2LH5 Picture
SeekIC No. : 00155574 Detail

STU95N2LH5: MOSFET N-Ch, 25V-0.0038ohms 80A

floor Price/Ceiling Price

US $ .39~.42 / Piece | Get Latest Price
Part Number:
STU95N2LH5
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~2250
  • 2250~5000
  • 5000~10000
  • Unit Price
  • $.42
  • $.4
  • $.39
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/26

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 22 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0049 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.0049 Ohms
Gate-Source Breakdown Voltage : +/- 22 V


Features:

RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
High avalanche ruggedness
Low gate drive power losses



Application

Switching applications


Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS=0)
25
V
VGS
Gate-Source voltage
±20
V
ID (1)
Drain current (continuous) at TC = 25°C
80
A
ID
Drain current (continuous) at TC = 100°C
67
A
IDM (2)
Drain current (pulsed)
320
A
PTOT
Total dissipation at TC = 25°C
70
W
Derating factor
0.47
W/°C
EAS (3)
Single pulse avalanche energy
165
mJ
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 175
°C
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj = 25°C, Id = 40 A, Vdd = 20 V



Description

This STU95N2LH5 utilizes the 5th generation of design rules of ST's proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in the standard packages, makes this STU95N2LH5 suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.




Parameters:

Technical/Catalog InformationSTU95N2LH5
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs4.9 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 1817pF @ 25V
Power - Max70W
PackagingTube
Gate Charge (Qg) @ Vgs13.4nC @ 5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STU95N2LH5
STU95N2LH5



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Prototyping Products
DE1
Motors, Solenoids, Driver Boards/Modules
Audio Products
Transformers
Static Control, ESD, Clean Room Products
View more