Features: ·Super high dense cell design for low RDS(ON).·Rugged and reliable.·Suface Mount Package.Specifications Symbol Parameter Limit Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous a TC=25 20...
STUD330S: Features: ·Super high dense cell design for low RDS(ON).·Rugged and reliable.·Suface Mount Package.Specifications Symbol Parameter Limit Units VDS Drain-Source Voltage 3...
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|
Symbol |
Parameter |
Limit |
Units | |
|
VDS |
Drain-Source Voltage |
30 |
V | |
|
VGS |
Gate-Source Voltage |
±20 |
V | |
|
ID |
Drain Current-Continuous a | TC=25 |
20 |
A |
| TC=70 |
16.3 |
A | ||
|
IDM |
-Pulsed b |
80 |
A | |
|
EAS |
Sigle Pulse Avalanche Energy d |
8.8 |
mJ | |
|
PD |
Maximum Power Dissipation a | TC=25 |
21 |
W |
| TC=70 |
13.3 |
W | ||
|
TJ, TSTG |
Operating Junction and Storage Temperature Range |
-55 to 150 |