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STV160NF03L

Features: The STV160NF03L represents the second generation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching ...

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SeekIC No. : 004508982 Detail

STV160NF03L: Features: The STV160NF03L represents the second generation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulti...

STV160NF03L Data Sheet

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Part Number:
STV160NF03L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/31

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Product Details

Description



Features:

The STV160NF03L represents the second generation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. Process
simplification also translates into improved manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial.




Application

 BUCK CONVERTERS IN HIGH PERFORMACETELECOMAND VRMs DC-DC CONVERTERS


Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 k)
30
V
VGS
Gate- source Voltage
± 20
V
ID(* *)
Drain Current (continuous) at TC = 25°C
160
A
ID
Drain Current (continuous) at TC = 100°C
113
A
IDM(•)
Drain Current (pulsed)
640
A
Ptot
Total Dissipation at TC = 25°C
160
W
 
Derating Factor
1.07
W/°C
Tstg
Storage Temperature
-65 to 175
°C
Tj
Operating Junction Temperature
175
°C



Description

The STV160NF03L represents the second generation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. Process simplification also translates into improved manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial.




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