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STV160NF03LA

Features: ` TYPICAL RDS(on) = 0.0021` LOW THRESHOLD DRIVE` ULTRA LOW ON-RESISTANCE` ULTRA FAST SWITCHING` 100% AVALANCHE TESTED` VERY LOW GATE CHARGE` LOW PROFILE, VERY LOW PARASITIC INDUCTANCE PowerSO-10 PACKAGEApplication· BUCK CONVERTERS IN HIGH PERFORMANCE TELECOM AND VRMs DCDC CONVERTERSPinou...

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SeekIC No. : 004508983 Detail

STV160NF03LA: Features: ` TYPICAL RDS(on) = 0.0021` LOW THRESHOLD DRIVE` ULTRA LOW ON-RESISTANCE` ULTRA FAST SWITCHING` 100% AVALANCHE TESTED` VERY LOW GATE CHARGE` LOW PROFILE, VERY LOW PARASITIC INDUCTANCE Powe...

STV160NF03LA Data Sheet

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Part Number:
STV160NF03LA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Features:

` TYPICAL RDS(on) = 0.0021
` LOW THRESHOLD DRIVE
` ULTRA LOW ON-RESISTANCE
` ULTRA FAST SWITCHING
` 100% AVALANCHE TESTED
` VERY LOW GATE CHARGE
` LOW PROFILE, VERY LOW PARASITIC INDUCTANCE PowerSO-10 PACKAGE


Application

· BUCK CONVERTERS IN HIGH PERFORMANCE TELECOM AND VRMs DCDC CONVERTERS


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
VDS
 Drain-source Voltage (VGS = 0)
30
V
VDGR
 Drain-gate Voltage (RGS = 20 k)
30
V
VGS
 Gate- source Voltage
± 15
V
ID(**)
 Drain Current (continuos) at TC = 25
160
A
ID
 Drain Current (continuos) at TC = 100
113
A
IDM (`)
 Drain Current (pulsed)
640
A
Ptot
 Total Dissipation at TC = 25
210
W
 Derating Factor
1.4
W/
EAS (1)
 Single Pulse Avalanche Energy
330
mJ
Tstg
 Storage Temperature
65 to 175
Tj
 Max. Operating Junction Temperature
175

(`) Pulse width limited by safe operating area.

Note: Marking will be STV160NF02AL
(1) VDD = 35V, ID = 45A, RG = 22 , L = 330H, Starting Tj=25
(**)Limited only maximum junction temperature allowed by PowerSO-10


Description

The STV160NF03LA represents the second generation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. Process simplification also translates into improved manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial




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