MFG:STM Package Cooled:SOP-10 D/C:05+
MFG: STM
Package Cooled: SOP-10
D/C: 05+
Description: The STV160NF03LA represents the second generation of Application Specific STMicroelectronics well esta...
The STV160NF03LA represents the second generation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. Process simplification also translates into improved manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain-gate Voltage (RGS = 20 k) |
30 |
V |
|
VGS |
Gate- source Voltage |
± 15 |
V |
|
ID(**) |
Drain Current (continuos) at TC = 25 |
160 |
A |
|
ID |
Drain Current (continuos) at TC = 100 |
113 |
A |
|
IDM (`) |
Drain Current (pulsed) |
640 |
A |
|
Ptot |
Total Dissipation at TC = 25 |
210 |
W |
| Derating Factor |
1.4 |
W/ | |
|
EAS (1) |
Single Pulse Avalanche Energy |
330 |
mJ |
|
Tstg |
Storage Temperature |
65 to 175 |
|
|
Tj |
Max. Operating Junction Temperature |
175 |
STV160NF03LA
PDF/DataSheet Download
The STV160NF03L represents the second generation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resi...
MOSFET N-CH 20V 160A POWERSO-10
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The STV160NF02LA represents the second generation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-res...
The STV160NF02L represents the second generation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resi...
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